Highly effective Mg 2 Si 1 − x Sn x thermoelectrics

Highly effective Mg 2 Si 1 − x Sn x thermoelectrics
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DOI:
10.1103/physrevb.74.045207
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发表时间:
2006-07
期刊:
影响因子:
3.7
通讯作者:
V. Zaitsev;M. Fedorov;E. A. Gurieva;I. Eremin;P. P. Konstantinov-P.;A. Samunin;M. Vedernikov
V. Zaitsev;M. Fedorov;E. A. Gurieva;I. Eremin;P. P. Konstantinov-P.;A. Samunin;M. Vedernikov
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
V. Zaitsev;M. Fedorov;E. A. Gurieva;I. Eremin;P. P. Konstantinov-P.;A. Samunin;M. Vedernikov

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Results of detailed investigations of ${\mathrm{Mg}}_{2}{B}^{\mathrm{IV}}$ $({B}^{\mathrm{IV}}=\mathrm{Si},\phantom{\rule{0.3em}{0ex}}\mathrm{Ge},\phantom{\rule{0.3em}{0ex}}\mathrm{Sn})$ compounds and their quasibinary alloys are presented. Our analysis revealed that ${\mathrm{Mg}}_{2}\mathrm{Si}\text{\ensuremath{-}}{\mathrm{Mg}}_{2}\mathrm{Sn}$ system has the most promising for thermoelectric applications combination of transport properties and band structure features. The $n$-type ${\mathrm{Mg}}_{2}{\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$ solid solutions were studied in broad range of compositions and electron concentration (up to $5\ifmmode\times\else\texttimes\fi{}{10}^{20}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$). Temperature dependencies of figure of merit were determined in temperature range $300\text{--}870\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ using results of simultaneous measurements of Seebeck coefficient, electrical, and thermal conductivities. The alloy of optimized composition has reproducible figure of merit $Z{T}_{\mathrm{max}}=1.1$. The results of the present study are compared with the data for best modern thermoelectrics.
Results of detailed investigations of ${\mathrm{Mg}}_{2}{B}^{\mathrm{IV}}$ $({B}^{\mathrm{IV}}=\mathrm{Si},\phantom{\rule{0.3em}{0ex}}\mathrm{Ge},\phantom{\rule{0.3em}{0ex}}\mathrm{Sn})$ compounds and their quasibinary alloys are presented. Our analysis revealed that ${\mathrm{Mg}}_{2}\mathrm{Si}\text{\ensuremath{-}}{\mathrm{Mg}}_{2}\mathrm{Sn}$ system has the most promising for thermoelectric applications combination of transport properties and band structure features. The $n$-type ${\mathrm{Mg}}_{2}{\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$ solid solutions were studied in broad range of compositions and electron concentration (up to $5\ifmmode\times\else\texttimes\fi{}{10}^{20}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$). Temperature dependencies of figure of merit were determined in temperature range $300\text{--}870\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ using results of simultaneous measurements of Seebeck coefficient, electrical, and thermal conductivities. The alloy of optimized composition has reproducible figure of merit $Z{T}_{\mathrm{max}}=1.1$. The results of the present study are compared with the data for best modern thermoelectrics.