Tunability of indium tin oxide materials for mid-infrared plasmonics applications
Tunability of indium tin oxide materials for mid-infrared plasmonics applications
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DOI：
10.1364/ome.7.002727
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发表时间：
2017-08
影响因子：
2.8
通讯作者：
Yu Wang;A. Overvig;S. Shrestha;Ran Zhang;Ren Wang;N. Yu;L. D. Negro
中科院分区：
文献类型：
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作者：
Yu Wang;A. Overvig;S. Shrestha;Ran Zhang;Ren Wang;N. Yu;L. D. Negro
近年来，透明导电氧化物（TCO）已经作为替代等离子体材料出现以取代贵金属。TCO的优点包括CMOS兼容性、光学和结构特性的可调谐性以及降低的损耗。在这项工作中，我们演示了如何沉积后退火的氧化铟锡（ITO）薄膜在氧气气氛中允许调整其光学色散特性的中红外光谱范围，同时减少其吸收损失。特别是，我们展示了一种将ITO的ε近零（ENZ）点从近红外范围扩展到中红外范围的材料策略。这通过制造不同直径的ITO圆盘的周期性阵列并在λ = 5至10 µm的中红外范围内表征其等离子体共振来证明。开发的ITO等离子体结构为在硅兼容平台上开发用于传感和光谱的新型红外有源器件铺平了道路。
Transparent conductive oxides (TCOs) have emerged as alternative plasmonic materials in recent years to replace noble metals. The advantages of TCOs include CMOS compatibility, tunability of optical and structural properties, and reduced losses. In this work, we demonstrate how post-deposition annealing of indium tin oxide (ITO) films in oxygen atmosphere allows for tuning their optical dispersion properties to the mid-infrared spectral range while simultaneously reducing their absorption losses. In particular, we show a materials strategy that extends the epsilon-near-zero (ENZ) point of ITO from the near-infrared to the mid-infrared range. This is demonstrated by fabricating periodic arrays of ITO discs of varying diameters and characterizing their plasmonic resonances in the mid-infrared range from λ = 5 to 10 µm. The developed ITO plasmonic structures pave the way to the development of novel infrared active devices for sensing and spectroscopy on a silicon-compatible platform.