Toward small size waveguide amplifiers based on erbium silicate for silicon photonics
Toward small size waveguide amplifiers based on erbium silicate for silicon photonics
复制标题
DOI：
10.1093/ietele/e91-c.2.138
复制
发表时间：
2008-02-01
影响因子：
0.5
通讯作者：
Kimura, Thdamasa
中科院分区：
文献类型：
--
作者：
Isshiki, Hideo;Kimura, Thdamasa
在硅芯片上集成光源是建立大规模集成电路系统新范式的里程碑之一，即所谓的“硅光子学”。“近年来，用于硅芯片上光互连的硅线波导技术取得了显著进展。本文从应用于硅光子学光发射和放大器件的角度出发，综述了几种硅基铒嵌入材料。我们集中精力研究了硅酸铒（Er2SiO5）作为硅光子学的光源介质。具体而言，该材料具有周期为0.86 nm的层状结构，并且大量Er（25at%）作为其成分。单晶性质为硅光子学的应用提供了几个显着的特性。我们还讨论了我们最近的研究Er_2SiO_5和短波导放大器的可能性。
Integration of light sources on a Si chip is one of milestone to establish new paradigm of LSI systems, so-called "silicon photonics." In recent years remarkable progress has been made in the Si wire waveguide technologies for optical interconnection on a Si chip. In this paper, several Er embedded materials based on silicon are surveyed from the standpoint of application to the light emission and amplification devices for silicon photonics. We have concentrated to investigate an erbium silicate (Er2SiO5) as a light source medium for silicon photonics. To mention the particular features, this material has a layered structure with 0.86-nm period and a large amount of Er (25at%) as its constituent. The single crystalline nature gives several remarkable properties for the application to silicon photonics. We also discuss our recent studies of Er2SiO5 and a possibility of the shorter waveguide amplifier.