Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing

Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing
复制标题

DOI：
10.1109/eosesd.1998.737037
复制
发表时间：
1998-12
期刊：
Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347)
影响因子：
--
通讯作者：
Christian Russ;K. Bock;Mahmoud Rasras;I. D. Wolf;Guido Groeseneken;H. Maes
Christian Russ;K. Bock;Mahmoud Rasras;I. D. Wolf;Guido Groeseneken;H. Maes
中科院分区：
其他
文献类型：
--
作者：
Christian Russ;K. Bock;Mahmoud Rasras;I. D. Wolf;Guido Groeseneken;H. Maes

文献摘要

被引文献

相似文献

The triggering of grounded gate nMOSFET (gg-nMOS) and field-oxide devices (FOXFETs), essential for optimized ESD protection design, is addressed by TLP-pulsed emission microscopy. Current nonuniformity and instability effects in snapback operation under DC and TLP conditions are demonstrated. The comprehensive correlation of emission and electrical behaviour allows an improved interpretation of device operation. Technological influences on the trigger uniformity are discussed.