Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure.
Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure.
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DOI：
10.1364/oe.18.005504
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发表时间：
2010-03
期刊：
影响因子：
3.8
通讯作者：
Yongjin Wang;F. Hu;Y. Kanamori;Tong Wu;K. Hane
中科院分区：
文献类型：
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作者：
Yongjin Wang;F. Hu;Y. Kanamori;Tong Wu;K. Hane
我们提出，制造和表征底部亚波长纳米结构的独立GaN纳米柱膜。GaN纳米柱外延生长在独立的纳米结构硅衬底上，通过自组装技术和绝缘体上硅（SOI）技术的组合实现。由于亚波长纳米结构的梯度折射率效应，在可见光范围内的光学反射被极大地抑制。通过从背侧移除硅衬底，消除硅对发射光的吸收并导致从底侧的强蓝色发射，来实现独立的GaN纳米柱膜。所获得的结构也展示了潜在的应用，减反射（AR）涂层和氮化镓-硅混合微机电系统（MEMS）。
We propose, fabricate and characterize the freestanding GaN nanocolumn membrane with bottom subwavelength nanostructures. The GaN nanocolumns are epitaxially grown on freestanding nanostructured silicon substrate that is achieved by a combination of self-assemble technique and silicon-on-insulator (SOI) technology. Optical reflection is greatly suppressed in the visible range due to the graded refractive index effect of subwavelength nanostructures. The freestanding GaN nanocolumn membrane is realized by removing silicon substrate from the backside, eliminating the silicon absorption of the emitted light and leading to a strong blue emission from the bottom side. The obtained structures also demonstrate the potential application for anti-reflective (AR) coating and GaN-Si hybrid microelectromechanical system (MEMS).