Precision Measurement of 1 MΩ Quantum Hall Resistance Array
Precision Measurement of 1 MΩ Quantum Hall Resistance Array
复制标题
1 MΩ 量子霍尔电阻阵列的精密测量
DOI：
10.1109/cpem.2018.8500946
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发表时间：
2018
期刊：
影响因子：
2.4
通讯作者：
Kaneko Nobu-Hisa
中科院分区：
文献类型：
--
作者：
Chae Dong-Hun;Kim Wan-Seop;Oe Takehiko;Kaneko Nobu-Hisa
本文给出了GaAsl AIGaAs异质衬底1 MΩ量子霍尔电阻阵列的精密测量初步结果。通过将阵列电阻与可追溯到量子霍尔效应的10 kΩ电阻标准进行比较，使用低温电流比较器电阻桥进行了精密测量。在18次×10-9through重复热循环的相对标准不确定度内，阵列的量子化稳定性反映了给定条件下阵列电阻的不变量子特性。
We present preliminary results of precision measurements of 1 MΩ quantum Hall resistance array made of the GaAsl AIGaAs heterosubstrate. Precision measurements have been performed with a cryogenic current comparator resistance bridge by comparing the array resistance to a 10 kΩ resistance standard traceable to the quantum Hall effect. Stability of the quantization in the array within the relative standard uncertainty of 18 ×10-9through repeated thermal cycles reflects the invariant quantum nature of the array resistance in a given condition.