Study on growth factors of SiC whisker in situ in SiCW/SiC composites based on selective laser sintering technology
Study on growth factors of SiC whisker in situ in SiCW/SiC composites based on selective laser sintering technology
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DOI：
10.1016/j.ceramint.2022.11.257
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发表时间：
2022
影响因子：
5.2
通讯作者：
Tao Zeng
中科院分区：
文献类型：
--
作者：
Decai Lu;Su Cheng;Liwei Zhang;Dequan Shi;Mingxing Fan;Tao Zeng
In this study, SiCW/SiC composite material was prepared through selective laser sintering (SLS), the effect of .material parameters (pretreatment of PCS, content of PCS, type of catalyst and content of catalyst) on the growth .number of SiC whisker was investigated. The results indicate that when the temperature variable of PCS pretreatment was 260 ◦C or 300 ◦C, the number of in situ generated SiC whisker was noticeably higher than that .pretreated at 140/180/200/240 ◦C. The catalytic effect of ferrocene was superior than pure Fe, α-Al2O3 and Fe .(NO3)3. Under this experimental condition, the best parameter was 10 wt.% of PCS and 4 wt.% of ferrocene. This .find not only provides a research basis for the preparation of SiCW/SiC composites prepared by SLS technology, .but also perfects basic datas for the preparation process of SiCW/SiC composites.
