The linearly graded two-dimensional p–n junction
The linearly graded two-dimensional p–n junction
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线性梯度二维 p-n 结
DOI：
10.1063/1.1736316
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发表时间：
2004
影响因子：
4
通讯作者：
A. Wieck
中科院分区：
文献类型：
--
作者：
S. Petrosyan;A. Yesayan;D. Reuter;A. Wieck
研究了二维线性渐变p-n结的电势分布、耗尽长度和电容-电压特性。它示出的总耗尽长度是成比例的接触电位差的平方根，在一个突然的2D结的线性依赖。结电容随外加电压的变化呈几何变化。作为耗尽层两端电压降的对数的函数的电容的曲线图应该是直线，其斜率指示2D p-n结的不连续性。
We study the potential distribution, depletion length, and capacitance–voltage characteristics of two-dimensional (2D) linearly graded p–n junctions. It is shown that the total-depletion length is proportional to the square root of the contact potential difference, in contrast to the linear dependence for an abrupt 2D junction. The junction capacitance varies logarithmically with the applied voltage. A graph of capacitance as a function of logarithm of voltage drop across the depletion layer should be a straight line, whose slope indicates the abruptness of a 2D p–n junction.