Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application
Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application
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DOI：
10.1116/1.2927922
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发表时间：
2008-05
影响因子：
1.4
通讯作者：
P. Zhou;H. Lv;M. Yin;L. Tang;Y. L. Song;T. Tang;Yinyin Lin;A. Bao;A. Wu;S. Cai
中科院分区：
文献类型：
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作者：
P. Zhou;H. Lv;M. Yin;L. Tang;Y. L. Song;T. Tang;Yinyin Lin;A. Bao;A. Wu;S. Cai
作者发现具有渐变氧浓度（GOC）分布的CuOx薄膜增强了非易失性存储器应用的阻变特性。采用Al/GOC CuOx scinCu结构，不仅不需要形成，而且开关的耐久性大大提高。具有GOC CuOx的器件显示出大于100的电阻开/关比和大于12000次循环的耐久性。“无成形”特性似乎与较薄的CuO有关，并且耐久性增强似乎与CuOx中的氧空位的逐渐梯度有关。因此，CuO的厚度和氧（以及空位）的分布对于性能改善起重要作用。
The authors found CuOx thin film with gradual oxygen concentration (GOC) distribution enhances resistive switching characteristics for nonvolatile memory applications. By using Al/GOC CuOx∕Cu structure, not only no forming is needed but also the endurance of switching is greatly enhanced. The device with GOC CuOx demonstrates resistance on/off ratio of greater than 100 and endurance of more than 12000cycles. The “forming-free” characteristics appear related to thinner CuO and the endurance enhancement appears related to gradual gradient of oxygen vacancies in CuOx. Thus, the thickness of CuO and distribution of oxygen (as well as vacancies) play important roles for performance improvement.