Enhancing memristor fundamentals through instrumental characterization and understanding reliability issues
Enhancing memristor fundamentals through instrumental characterization and understanding reliability issues
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通过仪器表征和理解可靠性问题增强忆阻器基础知识
DOI：
10.1039/d3ma00069a
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发表时间：
2023
影响因子：
5
通讯作者：
Lee, Sunghwan
中科院分区：
文献类型：
--
作者：
Qin, Fei;Zhang, Yuxuan;Song, Han Wook;Lee, Sunghwan
忆阻器是一种两端器件，当受到电应力时，其电阻可以在两种或两种以上不同的状态下改变和保持。这种独特的功能使忆阻器现在成为存储器和高级计算等下一代电子设备的一个有吸引力的研究领域。然而，目前对忆阻器的可靠表征方法还没有完全建立起来，无法理解其基本工作机理，也无法客观地评价性能优值。这篇综述涵盖了从材料到电气特性的各种表征方法，以确定忆阻器操作的基本原理。同时，较大的性能波动是阻碍这类设备在实际应用中采用的主要瓶颈。因此，本文的第二部分集中在记忆阻器的变化类型和其他可靠性问题上。文中还提出了提高可靠性的可能策略。这篇综述中涉及的关于忆阻器的表征技术和可靠性的主题与许多寻求推动电子设备和系统的技术水平向神经形态计算发展的研究具有重要的相关性。
Memristors, a two-terminal device, have a resistance that can be changed and retained in two or more different states when subjected to electrical stresses. This unique function makes memristors now an attractive area of research for next-generation electronic devices such as memory and advanced computation. However, credible characterization methods for memristors are not fully established yet to understand fundamental working mechanisms and objectively evaluate figures of merit performance. This review encompasses various characterization methods from materials to electrical characteristics to identify the fundamentals of memristor operations. Meanwhile, large performance variation is the main bottleneck hindering the adoption of this class of devices in practical applications. Thus, the second part of this article focuses on the types of variation and other reliability issues of memristors. Possible strategies to enhance reliability are suggested as well. Topics covered in this review on memristors’ characterization techniques and reliability are of significant relevance to many studies that seek to advance the state of the art in electronic devices and systems towards neuromorphic computing.