MOVPE growth and characterization of high‐N content InGaPN alloy lattice‐matched to GaP
MOVPE growth and characterization of high‐N content InGaPN alloy lattice‐matched to GaP
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与 GaP 晶格匹配的高氮含量 InGaPN 合金的 MOVPE 生长和表征
DOI：
10.1002/pssc.200303505
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Y. Shiraki
中科院分区：
文献类型：
--
作者：
S. Sanorpim;F. Nakajima;R. Katayama;Nobuhiro Nakadan;Tokuharu Kimura;K. Onabe;Y. Shiraki
采用低压（60 Torr）金属有机气相外延（MOVPE）方法在GaP（001）衬底上生长了InxGa 1-xP 1-yNy（x = 17.6%，0 < y ≤ 8.7%）合金薄膜。研究了InGaPN薄膜的结构和光学性质。随着N的掺入，压缩应变的减少和强烈的红移的光致发光（PL）的峰值能量和PL激发（PLE）的吸收边被清楚地观察到。对于低N含量（0% ≤ y < 3.4%）的薄膜，残余应变充分弛豫。而当N浓度较高时（3.4% < y ≤ 8.7%），InGaPN层在差距（001）衬底上是相干生长的。获得了N含量高达7.4%的晶格匹配InGaPN薄膜，对应于610.8 nm（2.03 eV）的10 K吸收波长。（© 2003 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
InxGa1−xP1−yNy (x = 17.6%, 0 < y ≤ 8.7%) alloy films have been grown on GaP(001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). Structural and optical properties of the InGaPN films have been investigated. With incorporation of N, a reduction of compressive strain and a strong red shift in both the photoluminescence (PL) peak energy and the absorption edge of PL excitation (PLE) were clearly observed. The residual strain sufficiently relaxes for films with low N contents (0% ≤ y < 3.4%). Whereas, for higher N concentrations (3.4% < y ≤ 8.7%), the InGaPN layers were coherently grown on the GaP (001) substrates. Lattice-matched InGaPN films with N content as high as 7.4% corresponding to a 10 K absorption wavelength of 610.8 nm (2.03 eV) have been obtained. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)