Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector crystals
Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector crystals
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DOI：
10.1109/nssmic.2003.1352661
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发表时间：
2003-10
期刊：
影响因子：
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通讯作者：
M. Fiederle;A. Fauler;J. Konrath;V. Babentsov;J. Franc;R. James
中科院分区：
文献类型：
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作者：
M. Fiederle;A. Fauler;J. Konrath;V. Babentsov;J. Franc;R. James
通过生长CdTe和（Cd,Zn）Te晶体，研究了补偿机制和对输运性质的影响。生长出Sn、In和Ge未掺杂和掺杂的晶体。晶体的电阻率高达10/sup / 9/ spl ω /cm甚至更高。输运性质在很大程度上取决于掺杂剂和补偿机制。对于深给体掺杂，Ge和Sn的电子迁移寿命积分别为2/ spl倍/ 10/sup -5/ cm/V和4/ spl倍/ 10/sup -4/ cm/sup 2/ V。In掺杂的（Cd,Zn）Te在3.3 /spl倍/ 10/sup -3/ cm/sup 2//V时获得了最高值。
CdTe and (Cd,Zn)Te crystals were grown to study the compensation mechanism and the influence on the transport properties. Undoped and doped crystals with Sn, In and Ge were grown. The crystals showed resistivities up to 10/sup 9/ /spl Omega/cm and higher. The transport properties depended strongly on the dopant and the compensation mechanism. For the doping with a deep donor the mobility-lifetime product of electrons were 2 /spl times/ 10/sup -5/ cm/V and 4 /spl times/ 10/sup -4/ cm/sup 2//V for Ge and Sn doped, respectively. The highest values was obtained for In doped (Cd,Zn)Te with 3.3 /spl times/ 10/sup -3/ cm/sup 2//V.