Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition
Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition
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DOI：
10.1063/1.116488
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发表时间：
1996-01-29
影响因子：
4
通讯作者：
Schultz, JA
中科院分区：
文献类型：
--
作者：
Lu, M;Bousetta, A;Schultz, JA
采用中性氮束和电子束蒸发硼的方法在Si（100）衬底上沉积了氮化硼（BN）薄膜（含有cBN/hBN混合相）。所有沉积的BN薄膜都是p型的，室温载流子浓度在5 × 10（16）到1 × 10（17）cm（-3）的范围内。当Mg电池温度从250 ℃变化到500 ℃时，Mg掺杂的BN膜显示出在1.2 × 10（18）cm（-3）到5.2 × 10（18）cm（-3）范围内的载流子浓度。分析膜的主要元素（B和N）和掺杂剂/杂质（Si、Mg、Fe等）。使用二次离子质谱法和反冲离子质谱法（MRSI）进行掺入。MRSI被证明是上级的氮化硼薄膜的掺杂剂表征。(C)1996年美国物理学会。
Boron nitride (BN) thin films (containing mixed cBN/hBN phase) have been deposited on Si(100) substrates using neutralized nitrogen beam and electron beam evaporation of boron. All as-deposited BN films were p type with a room-temperature carrier concentration in the range of 5 X 10(16) to 1 X 10(17) cm(-3). The Mg-doped BN films showed carrier concentrations in the range of 1.2 X 10(18) cm(-3) to 5.2 X 10(18) cm(-3) when the Mg cell temperature was varied from 250 to 500 degrees C. The films were analyzed for both majority elements (B and N) and dopant/impurity (Si, Mg, Fe, etc.) incorporation using secondary ion mass spectroscopy and mass spectroscopy of recoiled ions (MRSI). MRSI is shown to be superior for dopant characterization of boron nitride thin films. (C) 1996 American Institute of Physics.