InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content
InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content
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DOI：
10.1109/icp.2012.6379872
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发表时间：
2012-12
期刊：
影响因子：
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通讯作者：
T. Hosea;I. Marko;Z. Batool;K. Hild;S. Jin;Nadir Hossain;G. M. T. Chai;Stephen J. Sweeney;J. P. Petropoulos;Y. Zhong;P. Dongmo;J. Zide
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文献类型：
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作者：
T. Hosea;I. Marko;Z. Batool;K. Hild;S. Jin;Nadir Hossain;G. M. T. Chai;Stephen J. Sweeney;J. P. Petropoulos;Y. Zhong;P. Dongmo;J. Zide
在InGaBiAs/InP中用Bi取代少量As会导致带隙Eg和自旋轨道分裂ΔSO分别大幅降低和增加。实现ΔSO>;Eg的可能性和Eg的降低的温度（T）依赖性对于抑制复合损耗和改善中红外光子器件的性能是重要的。用光谱法测量了0≤x≤0.032的In_（0.53）Ga_（0.47）Bi_xAs_（1-x）/InP样品的Eg（x，T）和ΔSO（x，T）。虽然我们没有发现dEg/dT降低的明显证据（在所有样品中为0.33±0.07meV/K），但我们发现ΔSO>;Eg为3.3- 4.3%。价带反交叉模型的预测与测量结果符合得很好。
Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, Eg, and spin-orbit splitting, ΔSO, respectively. The possibility of achieving ΔSO>;Eg and a reduced temperature (T) dependence for Eg are significant for suppressing recombination losses and improving performance in mid-infrared photonic devices. We measure Eg(x, T) and ΔSO(x, T) in In0.53Ga0.47BixAs1-x/InP samples for 0≤x≤0.032 by optical spectroscopy. While we find no clear evidence of a decreased dEg/dT (≈0.33±0.07meV/K in all samples) we find ΔSO>;Eg for x>;3.3-4.3%. The predictions of a valence band anti-crossing model agree well with the measurements.