Properties of electron field emitters prepared by selected area deposition of CVD diamond carbon films
Properties of electron field emitters prepared by selected area deposition of CVD diamond carbon films
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DOI:
10.1016/s0925-9635(99)00262-9
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发表时间:
2000-04-01
影响因子:
4.1
通讯作者:
Lin, IN
中科院分区:
文献类型:
--
作者:
Fox, NA;Youh, MJ;Lin, IN
Selected area depositions (SAD) of diamond films were successfully achieved on silicon by two different approaches. In the first case, a standard lift-off technique employing a patterned SiO2 layer was used as a mask, and in the second case commercial ink-jet printer technology was adapted to be used to seed diamond nano-grit onto silicon. Patterned, boron-doped diamond pads roughly 5.6 mu m in diameter were formed by CVD growth on patterned SiO2/Si substrates and found to be composed of closely packed carbon clusters approximately 250-800 nm in size each containing 50-nm particles embedded in them. The patterned diamond film seeded by ink-jet printing formed after CVD growth with in situ boron-doping, dots (85 mu m in diameter) containing poly-crystals in the nanometre range. The resulting patterned diamond films were characterised by Raman and scanning electron microscope (SEM) analysis and then configured as cold cathode field emitters to determine their electron emission performance. The results suggest that patterned diamond films produced by ink-jet printing offer a simpler method for fabricating planar diamond emitter arrays with field emission and conduction properties which could be tailored to improve the performance and fabrication cost of cold held emitters in state-of-the-art field emission displays. (C) 2000 Elsevier Science S.A, All rights reserved.