Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range
Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range
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DOI：
10.1063/1.1661817
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发表时间：
1972-09
影响因子：
3.2
通讯作者：
D. G. Fisher;R. Enstrom;J. Escher;B. F. Williams
中科院分区：
文献类型：
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作者：
D. G. Fisher;R. Enstrom;J. Escher;B. F. Williams
在0≤x≥0.52的组成范围和1.38至0.74 eV的带隙（Eg）范围内的Ga 1 −xInxAs合金用Cs和O2活化。研究了不同载体浓度的样品。对于低至约0.8eV的带隙，光阈值等于带隙。测定的最长波长阈值为1.58 μm。据我们所知，这代表了III-V族化合物在真空中的光电发射所达到的最长波长响应。表面逃逸概率B由每个样品的量子产率数据得出。根据表面逃逸模型分析了B-vs-Eg数据，该模型包括（i）光激发载流子的有限宽度初始能量分布，（ii）弯带区域和（iii）各种类型的表面势垒的影响。与单一掺杂密度相关的表面逃逸概率数据可以通过仅包括功函数势垒或简单阶跃电势的模型来解释。但是，为了解释数据...
Ga1−xInxAs alloys in the composition range 0≤x≥0.52 and band‐gap (Eg) range of 1.38 to 0.74 eV were activated with Cs and O2. Samples of different carrier concentrations were investigated. For band gaps down to about 0.8 eV, the photothreshold was equal to the band gap. The longest wavelength threshold determined was 1.58 μm. To the best of our knowledge, this represents the longest wavelength response yet achieved for photoemission into vacuum from a III‐V compound. The surface escape probability, B, was derived from the quantum yield data for each sample. The B‐vs‐Eg data were analyzed according to a surface escape model which includes the effects of (i) a finite‐width initial energy distribution of photoexcited carriers, (ii) the bent‐band region and (iii) various types of surface potential barriers. Surface escape probability data pertaining to a single doping density could be explained by a model that includes only a work‐function barrier or simple step potential. However, in order to explain the dat...