Effects of dopant concentration, crystallographic orientation, and crystal morphology on secondary electron emission from diamond
Effects of dopant concentration, crystallographic orientation, and crystal morphology on secondary electron emission from diamond
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掺杂剂浓度、晶体取向和晶体形态对金刚石二次电子发射的影响
DOI：
10.1063/1.366256
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发表时间：
1997
影响因子：
3.2
通讯作者：
G. Brandes
中科院分区：
文献类型：
--
作者：
JohnC . Miller;G. Brandes
测量了不同硼浓度金刚石薄膜的二次电子发射特性。二次电子产额δ较高。产率是独立的入射光束的角度和晶体取向。二次电子产额在硼浓度为1019 - 1020 cm−3时最大。角分布在表面法线附近达到峰值，半高半宽为37±7°。二次电子产额随高能电子束轰击时间的延长而降低。发射的电子的能量分布包含一个大的，相对较窄的，低能量的峰值，消失了延长电子束轰击。大的二次电子产额和发射电子的窄能量分布与负电子亲和力态的近热化电子发射一致。
Secondary electron emission properties from crystalline and polycrystalline diamond films containing different boron concentrations were measured. The secondary electron yields δ were high. Yields were independent of incident beam angle and crystallographic orientation. The secondary electron yields were greatest for boron concentrations of 1019 – 1020 cm−3. The angular distribution was peaked about the surface normal with a half width at half maximum of 37±7°. The secondary electron yield decreased with prolonged energetic electron beam bombardment. The energy distribution of the emitted electrons contained a large, relatively narrow, low energy peak that disappeared with extended electron beam bombardment. The large secondary electron yields and narrow energy distributions of the emitted electrons were consistent with nearly thermalized electron emission from negative electron affinity states.