Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs
Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs
复制标题
衬底温度和单层覆盖对 GaAs 上 InAs 和 InGaAs 岛外延有序化的影响
DOI：
10.1063/1.113822
复制
发表时间：
1995
影响因子：
4
通讯作者：
J. Harris
中科院分区：
文献类型：
--
作者：
G. Solomon;J. Trezza;J. Harris
对于通过分子束外延在 GaAs 上生长 InAs Stranski-Krastanov (SK) 岛，我们发现面内岛直径随生长温度在 390–540°C 范围内呈指数变化。研究了 SK 生长中孤岛生长和岛聚结之间的过渡区域作为生长温度和等效 InAs 逐层单层 (ML) 覆盖范围的函数，以便扩展孤岛状态以用于量子限制应用。直径为 150 A 的 InAs 岛已经生长出来。 In0.5Ga0.5As 岛的生长表明，与 InAs 岛的生长相比，岛形核之前的二维外延区域增加，并且岛浓度降低。
For InAs Stranski–Krastanov (SK) island growth on GaAs by molecular‐beam epitaxy, we show that the in‐plane island diameter varies exponentially with the growth temperature over the range of 390–540 °C. A transition region in SK growth between isolated island growth and island coalescing is investigated as functions of growth temperature and equivalent InAs layer‐by‐layer monolayer (ML) coverage in order to extend the isolated island regime for quantum confinement applications. InAs islands of 150 A in diameter have been grown. Growth of In0.5Ga0.5As islands indicates an increased 2D epitaxial region before island nucleation and a decreased island concentration compared to growth of InAs islands.