VECSEL systems for quantum information processing with trapped beryllium ions
VECSEL systems for quantum information processing with trapped beryllium ions
复制标题
用于使用捕获铍离子进行量子信息处理的 VECSEL 系统
DOI：
10.1364/josab.475467
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
Andrew Wilson
中科院分区：
文献类型：
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作者：
S. Burd;J. Penttinen;Panyu Hou;Hannnah Knaack;S. Ranta;Mika Mäki;E. Kantola;Mircea Guina;D. Slichter;Dietrich Leibfried;Andrew Wilson
两个垂直外腔面发射激光器（VECSEL）系统产生的紫外（UV）辐射在235 nm和313 nm的演示。该系统适用于捕获铍离子的量子信息处理应用。每个系统由一个紧凑的，单频，连续波VECSEL产生高功率近红外光，可调谐超过几十纳米。一种系统使用基于GaInAs/GaAs量子威尔斯阱的增益镜在940 nm处产生2.4 W，其被转换为54 mW的235 nm光用于中性铍原子的光电离。另一个系统使用了一种新型的增益镜的基础上GaInNAs/GaAs量子阱，使波长扩展与可管理的应变在GaAs晶格。该系统在1252 nm处产生1.6 W，其被转换为41 mW的313 nm光，其用于激光冷却被捕获的$^{9}$Be$^{+}$离子并实施量子态制备和检测。313 nm系统也适用于实现高保真量子门，更广泛地说，我们的研究结果扩展了VECSEL系统在原子，分子和光学物理应用中的能力。
Two vertical-external-cavity surface-emitting laser (VECSEL) systems producing ultraviolet (UV) radiation at 235 nm and 313 nm are demonstrated. The systems are suitable for quantum information processing applications with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers. One system generates 2.4 W at 940 nm, using a gain mirror based on GaInAs/GaAs quantum wells, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a novel gain mirror based on GaInNAs/GaAs quantum-wells, enabling wavelength extension with manageable strain in the GaAs lattice. This system generates 1.6 W at 1252 nm, which is converted to 41 mW of 313 nm light that is used to laser cool trapped $^{9}$Be$^{+}$ ions and to implement quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates, and more broadly, our results extend the capabilities of VECSEL systems for applications in atomic, molecular, and optical physics.