A new TiW seed layer for SmCo5 films with perpendicular magnetic anisotropy

A new TiW seed layer for SmCo5 films with perpendicular magnetic anisotropy
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DOI:
10.1016/j.jmmm.2012.05.015
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发表时间:
2012-11
影响因子:
2.7
通讯作者:
W. Cheng;Wen-wu Liu;Xiao Wang;Yi-fan Dai;Xiaomin Cheng;X. Miao
W. Cheng;Wen-wu Liu;Xiao Wang;Yi-fan Dai;Xiaomin Cheng;X. Miao
中科院分区:
材料科学3区
文献类型:
--
作者:
W. Cheng;Wen-wu Liu;Xiao Wang;Yi-fan Dai;Xiaomin Cheng;X. Miao

文献摘要

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提出了一种新的SmCo5垂直磁各向异性薄膜种子层TiW。研究了TiW籽晶层对Cu底层显微结构和表面形貌的影响。Cu底层的晶粒尺寸和表面粗糙度对TiW种子层的厚度和退火的依赖性也进行了研究。证实了TiW种子层对SmCo5薄膜垂直磁性能的改善。结果表明,5nm的Ti3W7种子层改善了Cu底层的微观结构和表面形貌,显著提高了SmCo5薄膜的垂直磁性能。TiW种子层的高熔点和扩散势垒是SmCo5薄膜垂直磁各向异性增强的物理机制。
A new seed layer TiW is proposed for SmCo5films with perpendicular magnetic anisotropy. The influence of a TiW seed layer on the microstructure and the surface morphology of Cu underlayer are studied. The grain size and surface roughness dependence of Cu underlayer on the thickness and the annealing of the TiW seed layer are also investigated. The improvement in the perpendicular magnetic properties of SmCo5film from the TiW seed layer is approved. The results show that a 5nm Ti3W7seed layer improves the microstructure and surface morphology of Cu underlayer, and significantly improves the perpendicular magnetic properties of SmCo5film. The diffusion barrier and a high melting point of the TiW seed layer are regarded as the physical mechanism of the improvement for SmCo5film with perpendicular magnetic anisotropy.