Group IV mid-infrared photonics [Invited]
Group IV mid-infrared photonics [Invited]
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DOI：
10.1364/ome.8.002276
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发表时间：
2018-08-01
影响因子：
2.8
通讯作者：
Reed, G. T.
中科院分区：
文献类型：
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作者：
Mashanovich, G. Z.;Nedeljkovic, M.;Reed, G. T.
在本文中，我们回顾了 IV 组中红外光子器件的最新结果。特别是适合长波长操作的无源结构。如悬浮Si。分析了硅基Ge和悬浮Ge。此外，绝缘体上Ge波导的厚度为3.8μm。还实现了几种有源器件：硅和锗的光调制器，以及在较短的中红外波长下工作的硅和石墨烯探测器。 (C) 2018 年美国光学协会根据 OSA 开放获取出版协议条款
In this paper we review our recent results on group IV mid-infrared photonic devices. In particular, passive structures suitable for long wavelength operation. such as suspended Si. Ge-on-Si and suspended Ge, are analyzed. In addition, Ge-on-insulator waveguides have been characterized at 3.8 mu m. Several active devices have been also realized: optical modulators in silicon and germanium, and silicon and graphene detectors operating at shorter mid-IR wavelengths. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement