Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
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DOI：
10.1143/apex.4.042103
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发表时间：
2011-03
影响因子：
2.3
通讯作者：
Yuki Shimahara;H. Miyake;K. Hiramatsu;F. Fukuyo;Tomoyuki Okada;Hidetsugu Takaoka;H. Yoshida
中科院分区：
文献类型：
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作者：
Yuki Shimahara;H. Miyake;K. Hiramatsu;F. Fukuyo;Tomoyuki Okada;Hidetsugu Takaoka;H. Yoshida
制作了一种使用Si掺杂AlGaN膜作为电子束激发靶的紫外（UV）光源管。采用低压金属有机物气相外延（LP-MOVPE）方法在AlN/蓝宝石衬底上生长了Si掺杂AlGaN，并通过10 kV电子束（EB）激发对其光学性能进行了评价。通过Si掺杂和生长条件的优化，发光强度得到显著提高。从灯管中观察到247 nm深紫外光，在10 kV的EB加速电压和100 µA的电流下，灯管的寿命约为2000 h，直到初始强度的50%发射输出。
An ultraviolet (UV)-light-source tube using a Si-doped AlGaN film as a target of electron beam excitation was fabricated. The Si-doped AlGaN was grown on an AlN/sapphire substrate by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE), and its optical properties were evaluated by excitation with a 10 kV electron beam (EB). Emission intensity was significantly improved by Si doping and optimization of the growth conditions. 247 nm deep-UV light was observed from the tube, and the lifetime of the light tube until 50% emission output of the initial strength was approximately 2000 h at an EB acceleration voltage of 10 kV with a current of 100 µA.