Electrolyte-gated charge accumulation in organic single crystals
Electrolyte-gated charge accumulation in organic single crystals
复制标题
DOI：
10.1063/1.2387884
复制
发表时间：
2006-11
影响因子：
4
通讯作者：
H. Shimotani;H. Asanuma;J. Takeya;Y. Iwasa
中科院分区：
文献类型：
--
作者：
H. Shimotani;H. Asanuma;J. Takeya;Y. Iwasa
通过实验估算红荧烯单晶的累积电荷，对电解质栅控场效应晶体管和SiO2栅控场效应晶体管进行了比较研究。在1mHz下，电解质栅极的电容为15μF scincm 2，这比100 nm厚的SiO2栅极电介质的电容大两个数量级以上。电解质栅中的最大载流子密度为0.33hole闪烁分子，比SiO_2栅中的载流子密度大得多。此外，电解质栅场效应晶体管的传输特性在累积载流子密度为0.23hole闪烁分子时表现出可逆峰行为。
Comparative studies of electrolyte-gated and SiO2-gated field-effect transistors have been carried out on rubrene single crystals by experimentally estimating their accumulated charges. The capacitance of the electrolyte gate at 1mHz was 15μF∕cm2, which is more than two orders of magnitude larger than that of the 100-nm-thick SiO2 gate dielectric. The maximum carrier density in the electrolyte gate was 0.33hole∕molecule, which is considerably larger than that in the SiO2 gate. Furthermore, the transfer characteristics of the electrolyte-gate field-effect transistor showed reversible-peak behavior at an accumulated carrier density of 0.23hole∕molecule.