High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy
High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy
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DOI：
10.1063/1.2089183
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发表时间：
2005-10
影响因子：
4
通讯作者：
F. Xiu;Zheng Yang;L. J. Mandalapu;Dengtao Zhao;Jianlin Liu;W. Beyermann
中科院分区：
文献类型：
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作者：
F. Xiu;Zheng Yang;L. J. Mandalapu;Dengtao Zhao;Jianlin Liu;W. Beyermann
采用电子回旋共振辅助分子束外延技术在n-Si（100）衬底上生长了可重复生长的Sb掺杂p型ZnO薄膜。低温光致发光测试证实了Sb在ZnO：Sb薄膜中的存在。在8 K时，在3.358eV处观察到受主束缚激子（A°X）发射。的Sb掺杂剂的受体能级估计为0.2 eV以上的价带。对Sb掺杂ZnO薄膜进行了变温霍尔测量。在室温下，Sb掺杂ZnO样品表现出0.2Ωcm的低电阻率，1.7× 1018 cm-3的高空穴浓度和20.0cm 2 scinVs的高迁移率。这项研究表明，锑是一个可靠的和可重复的p型ZnO制造优良的掺杂剂。
Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton (A°X) emission was observed at 3.358 eV at 8 K. The acceptor energy level of the Sb dopant is estimated to be 0.2 eV above the valence band. Temperature-dependent Hall measurements were performed on Sb-doped ZnO films. At room temperature, one Sb-doped ZnO sample exhibited a low resistivity of 0.2Ωcm, high hole concentration of 1.7×1018cm−3 and high mobility of 20.0cm2∕Vs. This study suggests that Sb is an excellent dopant for reliable and reproducible p-type ZnO fabrication.