Electron and hole in-plane g-factors in single InAs quantum rings
Electron and hole in-plane g-factors in single InAs quantum rings
复制标题
单 InAs 量子环中的电子和空穴面内 g 因子
DOI：
10.1088/1742-6596/647/1/012011
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
and S. Adachi
中科院分区：
文献类型：
--
作者：
R. Kaji;T. Tominaga;Y.-N. Wu;S.-J. Cheng;and S. Adachi
研究了InAs/GaAs量子环中电子和空穴的面内g因子。通过横向磁场下的磁光致发光测量，我们通过沿着晶体生长轴系统地旋转样品来评估电子和空穴自旋的面内g因子。实验结果表明，空穴g因子的面内和面外各向异性都大于电子g因子，空穴面内g因子的值在QR到QR之间变化很大，而电子g因子几乎是一个常数。从考虑形状各向异性和单轴应力的影响的模型计算中，我们研究了面内g因子和价带混合程度之间的相关性。此外，实验获得的g因子的趋势与理论考虑定性一致。
The electron and hole in-plane g-factors were studied in individual InAs/GaAs quantum rings (QRs). From the magneto-photoluminescence measurements under a transverse magnetic field, we evaluated the in-plane g-factors of electron and hole spins by rotating the sample systematically along the crystal growth axis. The experimental results indicate that the in-plane and the out-of-plane anisotropies in hole g-factor are larger than those of electron g-factor, and the value of the hole in-plane g-factor varies largely from QR to QR while the electron g-factor is almost a constant value. From the model calculation considering the effects of shape anisotropies and uniaxial stress, we examined the correlation between the in-plane g-factors and the degree of valence band mixing. Further, the experimentally obtained trend in g-factors was in agreement qualitatively with theoretical consideration.