Electronic Structure and Charge-Trapping Characteristics of the Al(2)O(3)-TiAlO-SiO(2) Gate Stack for Nonvolatile Memory Applications.
Electronic Structure and Charge-Trapping Characteristics of the Al(2)O(3)-TiAlO-SiO(2) Gate Stack for Nonvolatile Memory Applications.
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用于非易失性存储器应用的 Al2O3-TiAlO-SiO2 栅堆栈的电子结构和电荷捕获特性
DOI：
10.1186/s11671-017-2040-x
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发表时间：
2017-12
影响因子：
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通讯作者：
Liu J
中科院分区：
文献类型：
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作者：
Xu W;Zhang Y;Tang Z;Shao Z;Zhou G;Qin M;Zeng M;Wu S;Zhang Z;Gao J;Lu X;Liu J
在这项工作中，研究了高k复合TiAlO薄膜作为非易失性存储器应用的电荷捕获材料。退火形成的al2o3 - tialo - sio2介电层具有显著的记忆效应和优异的可靠性。该器件在±8 V扫描电压下具有~2.6 V的大记忆窗口，且在保持10多年后仅显示~14%的电荷损失，具有优良的电荷保持性能。利用x射线光电子能谱对al2o3 -TiAlO- sio2的电子结构进行了研究，结果表明，TiAlO薄膜中的量子阱和缺陷阱可以为TiAlO层中的电荷限制提供>1.8 eV的深势垒。al2o3与tio2的混合可以增加与Ti3+原子欠配位相关的缺陷，从而提高器件的电荷捕获效率。我们的工作表明，高k TiAlO复合薄膜在未来的非易失性电荷捕获存储器中有很大的应用前景。
In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2dielectric stack demonstrates significant memory effects and excellent reliability properties. The memory device exhibits a large memory window of ~2.6 V under ±8 V sweeping voltage, and it shows only ~14% charge loss after more than 10 years' retention, indicating excellent charge retention properties. The electronic structures of the Al2O3-TiAlO-SiO2have been studied by X-ray photoelectron spectroscopy measurements, and it reveals that the quantum well and the defect traps in TiAlO film can provide a >1.8 eV deep barrier for charge confinement in the TiAlO layer. The mixing between Al2O3and TiO2can increase the defects related to the under-coordinated Ti3+atoms, thereby enhancing the charge-trapping efficiency of the device. Our work implies that high-k TiAlO composite film is promising for applications in future nonvolatile charge-trapping memories.