Influence of epitaxy on the surface conduction of diamond film
Influence of epitaxy on the surface conduction of diamond film
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DOI：
10.1016/j.diamond.2003.10.025
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发表时间：
2004-02-01
影响因子：
4.1
通讯作者：
Kobayashi, N
中科院分区：
文献类型：
--
作者：
Kasu, M;Kubovic, M;Kobayashi, N
研究了H端表面沟道金刚石场效应晶体管（FET）中金刚石同质外延层的晶体和表面性质对器件性能的影响。层内的晶体缺陷导致FET DC操作中的栅极电流泄漏。我们证实了层内硼受体的掺入。它们的残余受主在直流工作时会引起缓冲区泄漏，但对射频特性影响不大。来自环境的吸附物改变由H-终止产生的表面空穴的浓度。(C)2003 Elsevier B. V.保留所有权利。
The influence of the crystalline and surface properties of diamond homoepitaxial layers on device properties in H-terminated surface-channel diamond field effect transistors (FETs) is investigated. Crystalline defects inside the layers result in gate current leakage in FET DC operation. We confirmed incorporation of boron acceptors inside the layers. Their residual acceptors result in buffer leakage in DC operation, but do not affect RF characteristics much. Adsorbates from the environment change the concentration of the surface holes generated by the H-termination. (C) 2003 Elsevier B.V. All rights reserved.