Optimized antireflective silicon nanostructure arrays using nanosphere lithography
Optimized antireflective silicon nanostructure arrays using nanosphere lithography
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DOI：
10.1088/0957-4484/27/21/215302
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发表时间：
2016-04
期刊：
影响因子：
3.5
通讯作者：
Dohaeng Lee;Jiwoong Bae;Soonwook Hong;Hwichul Yang;Young-Beom Kim
中科院分区：
文献类型：
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作者：
Dohaeng Lee;Jiwoong Bae;Soonwook Hong;Hwichul Yang;Young-Beom Kim
采用胶体纳米球光刻结合反应离子蚀刻技术，在硅衬底上制备了宽带亚波长抗反射阵列。通过改进传统的纳米球光刻工艺，可以精确控制纳米结构的形态，包括形状、基底直径和高度。基于实验测量的反射率，我们研究了它们对光学特性的影响。在300 ~ 800 nm（即近紫外到可见光）光谱范围内，Si纳米结构阵列的平均反射率约为1%。这种制造方法可用于制造大表面积，并为抗反射应用提供了一种有前途的方法。
Broadband optical antireflective arrays of sub-wavelength structures were fabricated on silicon substrates using colloidal nanosphere lithography in conjunction with reactive ion etching. The morphology of the nanostructures, including the shape, base diameter and height, was precisely controlled by modifying the conventional process of nanosphere lithography. We investigated their effects on the optical characteristics based on experimentally measured reflectance performance. The Si nanostructure arrays demonstrated optical antireflection performance with an average reflectance of about 1% across the spectral range from 300 to 800 nm, i.e. near-ultraviolet to visible wavelengths. This fabrication method can be used to create a large surface area and offers a promising approach for antireflective applications.