Comparative study of the electronic structure of XRu2Si2:: probing the Anderson lattice
Comparative study of the electronic structure of XRu2Si2:: probing the Anderson lattice
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DOI：
10.1016/s0368-2048(01)00257-2
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发表时间：
2001-06-01
影响因子：
1.9
通讯作者：
Yamagami, H
中科院分区：
文献类型：
--
作者：
Denlinger, JD;Gweon, GH;Yamagami, H
d采用角分辨光谱学（ARPES）测定了LaRu2Si2、CeRu2Si2、ThRu2Si2和URu2Si2的k分辨单粒子激发，分别比较了不同标称占f(0)、f(1)、f(0)和f(2)的同结构层状化合物的k分辨激发。ARPES测量包括4d和sd边缘共振光电发射，以区分费米表面轮廓的s特征和费米能量强度映射。与RLAPW波段结构计算结果的比较表明，远离E-j的d波段结构具有很好的一致性。E-j区附近的差异突出了f相关和f-d杂交的k依赖效应。X = (La, Ce)的近似等维费米等高线表明，在远高于近藤温度的温度下，4f电子从CeRu2Si2费米表面排除。X= （Ce， U）的高分辨率光谱允许将f-d混合与安德森晶格模型的预测进行比较。Elsevier Science B.V.出版
dThe k-resolved single particle excitations, as determined by angle-resolved photoemission spectroscopy (ARPES), are compared and contrasted for, LaRu2Si2, CeRu2Si2, ThRu2Si2, and URu2Si2, isostructural layered compounds with differing nominal f-occupations of f(0), f(1), f(0), and f(2), respectively. ARPES measurements include 4d and Sd-edge resonant photoemission to distinguish S-character and Fermi-energy intensity mapping of Fermi surface contours. Comparison to RLAPW band structure calculations shows very good agreement of the d-band structure away from E-j. Discrepancies in the near E-j region highlight k-dependent effects of f-correlation and f-d hybridization. Approximately equal dimensions of Fermi contours for X = (La, Ce) suggest the exclusion of 4f electrons from the CeRu2Si2 Fermi surface at temperatures far above the Kondo temperature. High-resolution spectra for X= (Ce, U) allow comparison of f-d mixing to predictions of the Anderson lattice model. Published by Elsevier Science B.V.