Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity
Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity
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DOI：
10.1007/s12274-017-1855-1
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发表时间：
2018-05
期刊：
影响因子：
9.9
通讯作者：
Mengxing Sun;Qiyi Fang;D. Xie;Yilin Sun;Liu Qian;Jianlong Xu;Peng Xiao;Changjiu Teng;
中科院分区：
文献类型：
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作者：
Mengxing Sun;Qiyi Fang;D. Xie;Yilin Sun;Liu Qian;Jianlong Xu;Peng Xiao;Changjiu Teng;
一种高性能的异质结光电探测器是通过将n型Si衬底与使用物理气相沉积获得的p型单层WSe 2相结合而形成的。WSe 2/Si异质结的高质量表现为1 nA的抑制暗电流和107的极高整流比。在光照下，异质结表现出从紫外到近红外辐射的宽光响应范围。石墨烯量子点（GQD）的引入极大地提高了异质结的光电探测能力，具有强的光吸收和长的载流子寿命。GQDs/WSe 2/Si异质结的响应率高达1.707mA·W-1，响应时间为0.2ms，比探测率为4.51 × 109 Jones。这些性质表明，GQD/WSe 2/Si异质结在未来的高性能光电探测器中具有巨大的应用潜力。
A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of 1 nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots (GQDs) greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of ∼ 707 mA·W–1, short response time of 0.2 ms, and good specific detectivity of ∼ 4.51 × 109Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high-performance photodetectors.