Determination of Defect Concentrations in 28Si Crystals Using EPR for the Realization of the Kilogram
Determination of Defect Concentrations in 28Si Crystals Using EPR for the Realization of the Kilogram
复制标题
使用 EPR 测定 28Si 晶体中的缺陷浓度以实现公斤级
DOI：
10.1109/tim.2021.3062186
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发表时间：
2021
影响因子：
5.6
通讯作者：
Umeda Takahide
中科院分区：
文献类型：
--
作者：
Mizushima Shigeki;Kuramoto Naoki;Umeda Takahide
为了实现使用X射线晶体密度方法的千克，使用通过浮区法生长的28 Si晶体。通过电子顺磁共振（EPR）光谱分析从两个28 Si晶体（AVO 28晶体（Si 28 - 10 Pr 11晶体）和Si 28 - 23 Pr 11晶体）切割的样品。通过镜面抛光和随后的使用四甲基氢氧化铵（TMAH）溶液的蚀刻来制备样品。TMAH蚀刻消除了来自非晶硅的机械损伤表面层的信号，并且允许观察来自大块晶体中的空位缺陷的小信号。在研究中，空位缺陷的信号水平低于cm的检测限，并且对于28 Si晶体，实现千克所需的空位校正量估计为0.00（23）。因此，可以得出结论，使用迄今为止报道的两种28 Si晶体实现的千克实现之间的39（21）不一致性不能由空位缺陷的存在来解释，空位缺陷在黑暗中或在照明下是EPR活性的。
To realize the kilogram using the X-ray crystal density method,28Si crystals grown by the floating zone method were employed. Samples cut from two28Si crystals, the AVO28 crystal (Si28-10Pr11 crystal) and the Si28-23Pr11 crystal, were analyzed by means of an electron paramagnetic resonance (EPR) spectroscopy. The samples were prepared by mirror polishing and subsequent etching using tetramethylammonium hydroxide (TMAH) solution. TMAH etching eliminates signals from the mechanically damaged surface layers of amorphous silicon and allows for the observation of small signals from vacancy defects in bulk crystals. In the study, the signal level of the vacancy defects was below the detection limit ofcm, and the amount of vacancy correction required to realize the kilogram was estimated to be 0.00(23)for both28Si crystals. Therefore, it was concluded that the 39(21)inconsistency between the kilogram realizations achieved using the two28Si crystals reported thus far cannot be explained by the existence of vacancy defects that are EPR active in the dark or under illumination.