TEM with in situ Ion Irradiation of Nuclear Materials: The IVEM-Tandem User Facility
TEM with in situ Ion Irradiation of Nuclear Materials: The IVEM-Tandem User Facility
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核材料原位离子辐照 TEM：IVEM-Tandem 用户设施
DOI：
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发表时间：
2015
影响因子：
2.8
通讯作者：
E. Ryan
中科院分区：
文献类型：
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作者：
Meimei Li;M. Kirk;P. Baldo;E. Ryan
阿贡国家实验室 (ANL) 的 IVEM-Tandem 用户设施是世界领先的研究设施，用于对接近原子分辨率的离子辐照损伤和离子注入进行原位 TEM 研究。 IVEM-Tandem 设施将 500 kV 离子注入机与 300 kV Hitachi H9000NAR 透射电子显微镜连接起来。这种组合允许在 20 – 1300 K 的温度范围内同时进行离子辐照/注入和电子显微镜实验。凭借 LaB6 灯丝的卓越电子亮度，H-9000 显微镜非常适合使用衍射衬度对辐照引起的缺陷进行成像，这是一种在大多数情况下优于其他成像技术的成熟技术。这使得可以有效地实时观察辐照过程中纳米级缺陷的形成和演变。结合良好控制的辐照条件（恒定的样品方向和面积、样品温度、离子类型、离子能量、剂量率、剂量和施加应变），它提供了有关辐照环境中材料的结构和缺陷动态的关键信息。
The IVEM-Tandem User Facility at the Argonne National Laboratory (ANL) is a world-leading research facility for in situ TEM study of ion irradiation damage and ion implantation near the atomic resolution. The IVEM-Tandem Facility interfaces a 500 kV ion implanter to a 300 kV Hitachi H9000NAR transmission electron microscope. This combination allows experiments conducted with simultaneous ion irradiation/implantation and electron microscopy at temperatures ranging from 20 – 1300 K. With superior electron brightness of a LaB6 filament, the H-9000 microscope is ideally suited for imaging irradiation-induced defects using diffraction contrast, a well-established technique in most cases superior to other imaging techniques. This permits effective real time observation of nanoscale defect formation and evolution during irradiation. Coupled with well-controlled irradiation conditions (constant specimen orientation and area, specimen temperature, ion type, ion energy, dose rate, dose, and applied strain), it provides key information on structure and defect dynamics of a material in an irradiation environment.