Optical and Electrical Properties of Ag-Doped In2S3 Thin Films Prepared by Thermal Evaporation
Optical and Electrical Properties of Ag-Doped In2S3 Thin Films Prepared by Thermal Evaporation
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热蒸发法制备Ag掺杂In2S3薄膜的光电性能
DOI：
10.1155/2014/370861
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发表时间：
2014-01-01
影响因子：
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通讯作者：
Jia, Hongjie
中科院分区：
文献类型：
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作者：
Lin, Peijie;Lin, Sile;Jia, Hongjie
用热蒸发法在玻璃衬底上沉积了掺杂银的In2S3 （In2S3:Ag）薄膜。Ag浓度从0 at开始变化。至4.78美元。利用x射线衍射仪（XRD）、分光光度计和霍尔测量系统分别对其结构、光学和电学性质进行了表征。XRD分析证实了In2S3和AgIn5S8相的存在。随着Ag浓度的增加，膜的带隙从2.82 eV逐渐减小到2.69 eV，电阻率从10(3)左右急剧减小到5.478 × 10(-2) ω .cm。
Ag-doped In2S3 (In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3 and AgIn5S8 phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from similar to 10(3) to 5.478 x 10(-2) Omega.cm.