Fabrication of Cu/Co bilayer gate electrodes using selective chemical vapor deposition and soft lithographic patterning
Fabrication of Cu/Co bilayer gate electrodes using selective chemical vapor deposition and soft lithographic patterning
复制标题
使用选择性化学气相沉积和软光刻图案制造铜/钴双层栅电极
DOI：
10.1063/1.2396796
复制
发表时间：
2006
影响因子：
3.2
通讯作者：
S. K. Lim
中科院分区：
文献类型：
--
作者：
Haeryong Yang;J. Y. Lee;Sang‐Woo Kim;Y. Ko;Hyunjung Shin;J. Lee;C. Kim;M. Sung;H. Bang;B. Cho;Y. Bae;J. ;Dong;C. Jeong;S. Y. Kim;S. K. Lim
采用连续选择性化学气相沉积（CVD）和十八烷基三氯硅烷（OTS）微接触印刷技术相结合的方法制备了模板化Cu/Co双层栅电极。软光刻图案化的自组装单层（SAM）可以引导在50-90 °C的低温下发生的Co的生长，并用作Cu的连续和选择性生长的模板，从而在玻璃衬底上形成稳定和高质量的Cu/Co双层栅电极。这种简单的工艺提供了比其他常规工艺更少的工艺步骤和更高的性能，并且可以应用于大面积和高分辨率薄膜晶体管液晶显示器的制造。
A templated Cu/Co bilayer gate electrode was fabricated using the combined method of consecutive and selective chemical vapor deposition (CVD), and octadecyltrichlorosilane (OTS) microcontact printing techniques. Soft lithographically patterned self-assembled monolayers (SAMs) can direct the growth of Co occurring at the low temperatures 50–90 °C and serve as a template for the consecutive and selective growth of Cu, thereby forming stable and high quality Cu/Co bilayer gate electrodes on a glass substrate. This simple process provides fewer process steps and higher performance than other conventional processes, and can be applied to the fabrication of large area and high resolution thin film transistor liquid crystal displays.