Cu(111) epitaxial films on mica(001) substrate used for high quality graphene growth by chemical vapor deposition
Cu(111) epitaxial films on mica(001) substrate used for high quality graphene growth by chemical vapor deposition
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云母(001)衬底上的Cu(111)外延薄膜用于化学气相沉积高质量石墨烯生长
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发表时间：
2012
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通讯作者：
Y. Ichikawa
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作者：
M. Sato;A. Takigawa;Y. Ichikawa
石墨烯作为一种能够克服传统材料在电子、储能、热管理、微机电系统等领域应用局限的神奇材料备受关注，特别是透明导电薄膜（TCF），由于其具有比铟锡氧化物更高的柔性、成本效益和不含稀有金属等优点，有望在太阳能电池、平板显示器和触摸屏等领域得到广泛应用。最近，在一些研究小组中已经报道了通过化学气相沉积在过渡金属衬底上生长大面积的高质量石墨烯并转移到任意衬底以制备石墨烯TCF 1-3）。然而，通过CVD沉积的石墨烯TCF的薄层电阻不足以用于太阳能电池应用。为了进一步提高石墨烯的质量，必须需要Cu衬底的结晶性，例如对称性和单晶化。雷迪等等探索了通过蒸发沉积在基底平面蓝宝石上的单晶Cu（111）薄膜作为衬底，并在其上获得了低缺陷石墨烯4）。为了找到一种可行的方法，在这项研究中，我们报告了在合成云母（KMg 3（AlSi 3 O 10）F2）衬底上外延生长Cu（111）薄膜，以避免薄膜Cu中的缺陷产生。由于表面能低，在其上沉积铜薄膜可以降低坑密度。此外，通过在云母的解理面处轻松劈开铜沉积表面层，可以轻松获得大面积云母基板，并且可以重复使用。这些都有利于大面积TCF的工业化。
Graphene attracts much attention as a wonder material to overcome the limit of traditional materials in the field of electronics, energy storage, thermal management, MEMS and so on. In particular, application of transparent conductive film (TCF) is expected to adapt for solar cells, flat panel displays, and touch panels, because it allows us the high flexibility, cost efficiency and rare-metal free compared with Indium tin oxide. Recently, large-area with high quality graphene grown on transition metal substrates by chemical vapor deposition and transferring to arbitrary substrates have been reported in some research groups to prepare the graphene TCF 1-3) . However, the sheet resistance of graphene TCF deposited by CVD was not high enough to use for solar cells application. For further improvement of the quality of graphene, the crystallinity of Cu substrates such as symmetry and single crystallization must be needed. Reddy et. al. explored a single crystal Cu(111) thin film deposited on basal-plane sapphire by evaporation as a substrates, and obtained low defect graphene on them 4) . To find a feasible way, in this study, we report that epitaxially grown Cu(111) films on synthetic mica (KMg3(AlSi3O10)F2) substrates are excellent to avoid defect creation in thin film Cu. Because has a low surface energy and the pit density could be reduced in the thin film Cu deposited on it. In addition, large-area mica substrates are easily obtained and are reusable by cleaving easily the Cu deposited surface layer at a cleavage plane of mica. These are advantages for industrialization of large-area TCF’s.