Using the aerial image measurement technique to speed up mask development for 193-nm immersion and polarization lithography
Using the aerial image measurement technique to speed up mask development for 193-nm immersion and polarization lithography
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使用航空图像测量技术加速 193 nm 浸没式和偏振光刻掩模的开发
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
J. Greif
中科院分区：
文献类型：
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作者：
A. Zibold;W. Harnisch;T. Scheruebl;N. Rosenkranz;J. Greif
用于 193nm 光刻仿真的航空图像测量系统 (AIMS) 被确立为快速预测关键特征（例如密集图案或触点、掩模上的缺陷或修复）的晶圆适印性的标准。 AIMS 的好处是节省昂贵的图像鉴定费用，其中包括测试晶圆曝光和晶圆 SEM 测量。通过调整数值孔径、照明类型和部分相干性以匹配步进机或扫描仪，AIMS 可以预测任何 193 nm 掩模版（如二元、OPC 和 PSM）的可印刷性。新推出的 193nm 第二代 AIMS 晶圆厂系统能够模拟高达 0.92 的数值孔径 (NA)，并提供低至 65nm 节点的功能，无论使用浸没液体还是干燥条件。我们已经进行了严格的模拟研究，以研究 AIMS 和扫描仪结果在 NA = 0.92 时的匹配情况，并研究 AIMS 技术的扩展，以实现超 NA 的浸没式光刻仿真，最高可达 1.4。在 65nm 节点以下，将出现取决于掩模图案和材料的强偏振效应以及成像效应。将会表明，使用这种未来浸没式 AIMS 工具的偏振功能将提供非常合适的浸没式光刻仿真器。加上低 k1 值和偏振效应，193nm 掩模设计和制造将面临 65nm 及以下节点的设计和 OPC 布局的更多挑战。使用 AIMS 对测试掩模进行航空图像测量对于加快掩模开发至关重要。我们建议使用 AIMS 系统测量模拟定义的关键点或制造关注区域的掩模版，以分析缺陷可印刷性和掩模可制造性。
The Aerial Image Measurement System (AIMS) for 193nm lithography emulation is established as a standard for the rapid prediction of wafer printability of critical features, such as dense patterns or contacts, defects or repairs on masks. The benefit of AIMS is to save expensive image qualification consisting of test wafer exposures followed by wafer SEM measurements. By adjustment of numerical aperture, illumination type and partial coherence to match the stepper or scanner, AIMS predicts the printability of any 193nm reticle like binary, OPC and PSM. The newly available 193nm 2nd generation AIMS fab systems are able to emulate numerical apertures (NA) up to 0.92 and provide a capability down to 65nm node regardless of the use of an immersion liquid or dry conditions. Rigorous simulation studies have been performed to study the matching of AIMS and scanner results at NA = 0.92 and to study the extension of the AIMS technique for immersion lithography emulation of hyper NA up to at least 1.4. Strong polarization effects depending on mask patterns and material as well as imaging effects will occur below the 65nm node. It will be shown that using the polarization capabilities of such a future immersion AIMS tool will provide a very suitable immersion lithography emulator. Together with low k1 values and polarization effects, 193nm mask design and manufacturing will face increased challenges for design and OPC placement at the 65nm node and below. Aerial image measurements of test masks using AIMS will then be crucial to speed up mask development. We propose to measure reticles on critical points as defined by simulation or areas of concern for manufacture with the AIMS system to analyze defect printability and mask manufacturability.