Use of Mass Spectra for End Point Detection in Etching SiO2 Films on Si
Use of Mass Spectra for End Point Detection in Etching SiO2 Films on Si
复制标题
使用质谱在硅上蚀刻 SiO2 薄膜时进行终点检测
DOI：
10.1143/jjap.20.1255
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发表时间：
1981
期刊：
影响因子：
--
通讯作者：
M. Oshima
中科院分区：
文献类型：
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作者：
M. Oshima
本文研究了反应溅射腐蚀Si基片上SiO_2膜的质谱监测技术。85 SiF 3+质量峰被证明是比16 O+质量峰更有效的监测指标。通过XPS表面分析证实了通过这种监测技术确定的终点。在SiO2-Si界面处的信号衰减率表示为SiO2和Si的蚀刻速率以及样品面积的函数。在不同的刻蚀功率下，该衰减率与实验结果吻合较好。从信噪比和信号稳定性的角度来看，这种使用85 SiF 3+质量峰的监测技术比SiO2-Si系统中的发射光谱法更有效。
A study has been made on a monitoring technique using mass spectra in etching SiO2 films on Si substrates by reactive sputter etching. The 85SiF3+ mass peak proved to be a more effective indicator for the monitoring than the 16O+ mass peak. The end point determined by this monitoring technique was confirmed by XPS surface analysis. The signal decrement ratio at the SiO2-Si interface was denoted as a function of the etch rates of SiO2 and Si, and the sample area. This decrement ratio shows good agreement with the experimental results at various etching powers. This monitoring technique, using the 85SiF3+ mass peak, turns out to be more effective than emission spectrometry in the SiO2-Si system from the viewpoints of signal-to-noise ratio and signal stability.