Generation and reduction in SiO2/Si interface state density during plasma etching processes
Generation and reduction in SiO2/Si interface state density during plasma etching processes
复制标题
等离子刻蚀过程中 SiO2/Si 界面态密度的产生和降低
DOI：
10.1063/1.2982408
复制
发表时间：
2008
影响因子：
3.2
通讯作者：
S. Samukawa
中科院分区：
文献类型：
--
作者：
Y. Ishikawa;Y. Ichihashi;S. Yamasaki;S. Samukawa
在等离子体工艺过程中，SiO2/Si 界面态是通过紫外光子照射产生的。我们通过电子自旋共振光谱测量了 SiO2/Si 薄膜中的 Pb 中心（SiO2/Si 界面上的 Si 悬空键）。 Pb 中心的密度随着紫外光子能量的增加而增加。这一结果表明，由于 SiO2/Si 界面处的吸收，高能光子有效地产生了 Pb 中心。同时，我们发现紫外光子通量也是增加Pb中心密度的重要因素。另一方面，离子辐照并不是 Pb 中心产生的重要因素。离子只能穿透表面（小于 5 nm），但不能在 SiO2/Si 界面处诱导出 Pb 中心。此外，脉冲时间调制等离子体用于减少等离子体处理过程中的紫外光子辐射。与使用传统的连续波等离子体相比，紫外光子照射的减少可以完全消除 Pb 中心。
During plasma processes, the SiO2/Si interface state is generated by UV photon irradiation. We measured Pb centers (Si dangling bond at SiO2/Si interface) in SiO2/Si film by electron spin resonance spectroscopy. The density of Pb centers increased with increasing UV photon energy. This result indicates that high-energy photons effectively generate Pb centers because of the absorption at the SiO2/Si interface. At the same time, we found that UV photon flux is also an important factor in increasing the density of Pb centers. On the other hand, ion irradiations were not a significant factor in the generation of Pb centers. Ions can penetrate only the surface (less than 5 nm) but they cannot induce a Pb center at the SiO2/Si interface. Furthermore, pulse-time-modulated plasmas were used to reduce the UV photon irradiation during the plasma processes. The reduction in UV photon irradiation could completely eliminate the Pb centers compared with the use of a conventional continuous wave plasma.