Characterization of CdZnTe co-doped with indium and lead
Characterization of CdZnTe co-doped with indium and lead
复制标题
铟铅共掺杂 CdZnTe 的表征
DOI：
10.1016/j.nima.2014.10.010
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发表时间：
2015-01-11
影响因子：
1.4
通讯作者：
Zha, Gangqiang
中科院分区：
文献类型：
--
作者：
Zaman, Yasir;Jie, Wanqi;Zha, Gangqiang
通过 I-V 测量、热刺激电流 (TSC) 光谱和飞行时间 (TOF) 对铟和铅共掺杂 Cd0.9Zn0.1Te (CZT:(In,Pb)) 进行了表征。 In和Pb的掺杂水平浓度分别为10ppm和2ppm。 I-V曲线显示CZT:(In,Pb)具有高达1.8 x 10(10) Omega cm的电阻率和约868 cm(2)/V s的迁移率(mu)，这对于探测器的制造来说是可以接受的。然而，载流子寿命（tau）仅为9.44 x 10(-7) s。因此，mu tau（移动寿命乘积）值较低。 TSC 结果显示出 13 种不同的陷阱能级，远高于掺铟 CZT 晶体中的陷阱能级。发现了几个与铅相关的特殊陷阱，这可能是载流子寿命短的原因。 (C) 2014 Elsevier B.V. 保留所有权利。
Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8 x 10(10) Omega cm, and the mobility (mu) of about 868 cm(2)/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (tau) was only 9.44 x 10(-7) s. Therefore, the mu tau (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time. (C) 2014 Elsevier B.V. All rights reserved.