Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes
Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes
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DOI：
10.1021/nl052528d
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发表时间：
2006-05-01
期刊：
影响因子：
10.8
通讯作者：
Avouris, Phaedon
中科院分区：
文献类型：
--
作者：
Lin, Yu-Ming;Appenzeller, Joerg;Avouris, Phaedon
我们提出了一个系统的研究由一个单一的半导体纳米管，表现出显着的1/f型噪声的纳米器件的低频电流波动。通过检查不同的开关机制，载流子类型（电子与空穴），和沟道长度的设备，我们表明，在半导体纳米管的1/f波动水平是相关的运输载流子的总数存在于系统中。然而，每个载流子的1/f噪声水平并不大于大多数体常规半导体的1/f噪声水平，例如。例如，在一个实施例中，Si.在纳米管器件中观察到的显著噪声水平仅仅反映了参与传输的少量载流子。这些结果不仅为量化一维输运系统中的噪声行为提供了基础，而且还提出了一种基于1/f波动现象表征低维纳米结构的有价值的方法。
We present a systematic study on low-frequency current fluctuations of nanodevices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types ( electrons vs holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e. g., Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon.