High-Field Magnetoresistance of Organic Semiconductors
High-Field Magnetoresistance of Organic Semiconductors
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DOI：
10.1103/physrevapplied.10.024008
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发表时间：
2018-08-09
影响因子：
4.6
通讯作者：
Boehme, C.
中科院分区：
文献类型：
--
作者：
Joshi, G.;Teferi, M. Y.;Boehme, C.
The magnetoelectronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge-carrier pairs due to small differences in their Lande g factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multifrequency continuous-wave electrically detected magnetic-resonance experiments. The measurements are performed on identical devices under similar conditions in order to independently assess the magnetic-field-dependent spin-mixing mechanism, the so-called Delta g mechanism. An understanding of the microscopic origin of magnetoresistance in organic semiconductors is crucial for developing reliable magnetometer devices capable of operating over a broad range of magnetic fields of order 10(-7)-10 T.
