Thermal characterization of GaN-based laser diodes by forward-voltage method
Thermal characterization of GaN-based laser diodes by forward-voltage method
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DOI：
10.1063/1.4716003
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发表时间：
2012-05
影响因子：
3.2
通讯作者：
M. Feng;S. Zhang;D. Jiang;Jianping Liu;Haoru Wang;Chang Zeng;Zongbao Li;Hui Wang;Fuhui Wang;Hui Yang
中科院分区：
文献类型：
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作者：
M. Feng;S. Zhang;D. Jiang;Jianping Liu;Haoru Wang;Chang Zeng;Zongbao Li;Hui Wang;Fuhui Wang;Hui Yang
推导了GaN基激光二极管（LD）和发光二极管共同的结温与正向电压关系的表达式。利用该表达式，测量了不同注入电流下GaN基激光二极管405 nm发光的结温，并与显微拉曼光谱结果进行了比较，验证了该表达式的合理性。此外，基于正向电压的温度依赖关系，得到了Mg在AlGaN/GaN超晶格层中的激活能。
An expression of the relation between junction temperature and forward voltage common for both GaN-based laser diodes (LDs) and light emitting diodes is derived. By the expression, the junction temperature of GaN-based LDs emitting at 405 nm was measured at different injection current and compared with the result of micro-Raman spectroscopy, showing that the expression is reasonable. In addition, the activation energy of Mg in AlGaN/GaN superlattice layers is obtained based on the temperature dependence of forward voltage.