Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal–oxide–semiconductor capacitors
Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal–oxide–semiconductor capacitors
复制标题
碳化硅金属氧化物半导体电容器介电击穿过程中形成的地毯式轰炸凹面的多重击穿模型
DOI：
10.7567/jjap.53.08la01
复制
发表时间：
2014
影响因子：
1.5
通讯作者：
M. Niwa
中科院分区：
文献类型：
--
作者：
S. Sato;Y. Hiroi;K. Yamabe;M. Kitabatake;T. Endoh;M. Niwa
对含热生长氧化物的碳化硅金属氧化物半导体电容器进行了零时间击穿(TZDB)和含时介质击穿(TDDB)测试，观察到了典型的“地毯式”凹陷现象。提出了一种多重击穿模型来解释TZDB测量中地毯状凹陷的形成机理。我们的TDDB测量结果和分析一致支持我们的多重分解模型。
We observed characteristic “carpet-bombing-like concaves” after time-to-zero dielectric breakdown (TZDB) and time-dependent dielectric breakdown (TDDB) measurement for silicon carbide metal–oxide–semiconductor capacitors with a thermally grown oxide. A multiple breakdown model is proposed to explain the formation mechanism of the carpet-bombing-like concaves in TZDB measurement. Results and analysis of our TDDB measurements consistently support our multiple breakdown model.