Selective Deposition and Bond Strain Relaxation in Silicon PECVD Using Time Modulated Silane Flow
Selective Deposition and Bond Strain Relaxation in Silicon PECVD Using Time Modulated Silane Flow
复制标题
使用时间调制硅烷流在硅 PECVD 中进行选择性沉积和键合应变松弛
DOI：
10.1143/jjap.31.1943
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发表时间：
1992
影响因子：
1.5
通讯作者：
James C. Tsang James C. Tsang
中科院分区：
文献类型：
--
作者：
G. Parsons;John J. Boland John J. Boland;James C. Tsang James C. Tsang
在等离子体增强化学气相沉积（PECVD）中使用时间调制的气流为生长过程提供了额外程度的灵活性，以控制膜成核并改变沉积膜的性质。具体而言，我们表明，硅烷到氢等离子体的时间调制流允许衬底选择性成核和微晶硅薄膜的结晶度增强。我们已经使用了拉曼光谱，红外吸收光谱和扫描隧道显微镜（STM）的原子氢和生长表面，导致微晶形成和选择性沉积之间的反应。我们发现，暴露于原子氢的生长表面的结果：1）高应变的表面键断裂;和2）从表面的硅蚀刻。我们发现，衬底依赖的成核，和不同的nucleii的不同的蚀刻速率，导致选择性沉积。然而，我们发现，蚀刻是不足以占微晶的形成，和原子氢的键应变弛豫促进表面上的吸附原子的运动，并导致结晶硅的成核。选择性沉积技术已被应用于薄膜晶体管器件的形成，这些结果也被提出。
The use of time modulated gas flows in plasma enhanced chemical vapor deposition (PECVD) gives an additional degree of flexibility to the growth process to control film nucleation and modify the properties of the deposited films. Specifically, we show that time modulated flow of silane into a hydrogen plasma allows for substrate selective nucleation and enhanced crystallinity of microcrystalline silicon films. We have used Raman spectroscopy, infrared absorption spectroscopy and scanning tunneling microscopy (STM) to investigate reactions between atomic hydrogen and the growth surface that result in crystallite formation and selective deposition. We show that exposing the growth surface to atomic hydrogen results in: 1) breaking of highly strained surface bonds; and 2) etching of silicon from the surface. We find that substrate dependent nucleation, and the different etch rates of the different nucleii, lead to selective deposition. However, we show that etching is not sufficient to account for microcrystallite formation, and that bond strain relaxation by atomic hydrogen promotes motion of adatoms on the surface and leads to the nucleation of crystalline silicon. The selective deposition technique has been applied to the formation of thin film transistor devices, and these results are also presented.