AES and LEED study of well‐ordered oxide film grown on Cu–9at.%Al(111)
AES and LEED study of well‐ordered oxide film grown on Cu–9at.%Al(111)
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Cu–9at.%Al(111) 上生长的有序氧化膜的 AES 和 LEED 研究
DOI:
10.1002/sia.1610
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发表时间:
2003
影响因子:
1.7
通讯作者:
Y. Yamauchi
中科院分区:
文献类型:
--
作者:
M. Yoshitake;S. Bera;Y. Yamauchi
An alloy of Cu–9at.%Al(111) has been oxidized in a low‐energy electron diffraction (LEED)/AES and a scanning AES instrument at elevated temperatures. Dosing with 1300 L of oxygen at 995 K gives rise to well‐ordered oxide layer formation on the Cu–9at.%Al alloy. The structure of the ordered oxide confirmed by LEED is ($7/\sqrt{3} \times 7/\sqrt{3}$) R30°. The chemical state of the oxide was Al2O3. The morphology of the surface observed with SEM in the scanning AES instrument revealed flat oxide growth with triangular defects of the same orientation. The possible epitaxy between the alloy substrate and alumina layer has been discussed. Copyright © 2003 John Wiley & Sons, Ltd.