Elimination of Leakage in GaN-on-Diamond
Elimination of Leakage in GaN-on-Diamond
复制标题
消除金刚石基氮化镓中的泄漏
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
Peter A. Houston
中科院分区：
文献类型：
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作者：
B. Alvarez;D. Francis;F. Faili;F. Lowe;D. Twitchen;K. B. Lee;Peter A. Houston
使用化学气相沉积金刚石作为氮化镓（GaN）的衬底以形成金刚石上GaN具有允许GaN高电子迁移率晶体管（HEMT）中的更高线性功率密度的潜力。金刚石衬底上GaN HEMT功率密度的增加迄今为止受到金刚石衬底上GaN中的漏电的限制。在本文中，我们表明，要消除硅基金刚石上GaN的缓冲区泄漏，你必须完全删除用于生长高质量的GaN在原来的主机硅上的过渡层。通过完全去除金刚石上GaN中的过渡层，我们证明了与碳化硅上GaN中的泄漏相当的缓冲泄漏。
The use of chemical vapor deposition diamond as a substrate for gallium nitride (GaN) to form GaN- on-diamond has the potential to allow for higher linear power densities in GaN high electron mobility transistors (HEMTs). The increase in GaN HEMT power density on diamond has been limited to date by the electrical leakage in GaN-on-diamond substrates. In this paper we show that to eliminate buffer leakage in silicon based GaN-on- diamond, you have to completely remove the transition layers used to grow high quality GaN on the original host silicon. By completely removing the transition layers in GaN-on-diamond, we demonstrated buffer leakage comparable to the leakage in GaN on silicon carbide.