Causes and Prevention of Temperature-Dependent Bubbles in Silicon Wafer Bonding
Causes and Prevention of Temperature-Dependent Bubbles in Silicon Wafer Bonding
复制标题
硅片键合中温度相关气泡的原因及预防
DOI：
10.1143/jjap.30.615
复制
发表时间：
1991
影响因子：
1.5
通讯作者：
Hisham Z. Massoud Hisham Z. Massoud
中科院分区：
文献类型：
--
作者：
K. Mitani;V. Lehmann;R. Stengl;D. Feijóo;Ulrich M. Gösele Ulrich M. Gösele;Hisham Z. Massoud Hisham Z. Massoud
研究了在200 ~ 800℃温度范围内，结合硅片界面产生的非结合区或气泡。本文所描述的实验表明，在硅片表面碳氢化合物污染的解吸似乎是这些气泡形成的必要条件。SIMS数据也表明在键合界面存在碳氢化合物。据推测，气泡成核需要碳氢化合物气体，如CH4，这些气泡中要么含有CH4，要么含有H2本身，要么含有两种气体的混合物。最后，提出了防止这些气泡形成的方法。
Unbonded areas or bubbles generated at the interface of bonded silicon wafers in the temperature range of 200-800°C have been investigated. Experiments described in this paper demonstrate that the desorption of hydrocarbon contamination at the silicon wafer surfaces appears to be a necessary condition for the formation of these bubbles. SIMS data also indicate the existence of hydrocarbons at the bonding interface. It is speculated that hydrocarbon gas such as CH4 is required for bubble nucleation and that either CH4 or H2 itself or a mixture of both gases is contained in these bubbles. Finally, methods to prevent the formation of these bubbles are presented.