Broadband RF-Input Continuous-Mode Load-Modulated Balanced Power Amplifier With Input Phase Adjustment
Broadband RF-Input Continuous-Mode Load-Modulated Balanced Power Amplifier With Input Phase Adjustment
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DOI：
10.1109/tmtt.2020.3012141
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发表时间：
2020-08
影响因子：
4.3
通讯作者：
Jingzhou Pang;Chenhao Chu;Yue Li;A. Zhu
中科院分区：
文献类型：
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作者：
Jingzhou Pang;Chenhao Chu;Yue Li;A. Zhu
通过在宽带RF输入连续模式负载调制平衡功率放大器（CM-LMBA）结构中引入CM输出匹配网络，介绍了CM-LMBA的原理和设计方法。结果表明，在整个负载调制过程中，通过适当调整所提出的CM-LMBA中不同PA支路之间的相位差，可以实现CM阻抗条件。设计并实现了一个使用商用GaN晶体管的1.45-2.45 GHz带宽的RF输入CM-LMBA，以验证所提出的架构。所制作的CM-LMBA获得了11.2-13.4-dB的增益和大约40-W的饱和功率。在整个设计频带内，当输出功率回退为6 dB和8 dB时，功率附加效率（PAE）分别为46.4%-56.5%和43.2%-50.3%。当由具有8 dB峰均功率比（PAPR）的100 MHz OFDM信号驱动时，所提出的CM-LMBA在1.8和2.1 GHz的数字预失真后实现优于−46 dBc的邻道泄漏比（ACLR）和高于45%的平均PAE。
This article presents the theory and design methodology of broadband RF-input continuous-mode load-modulated balanced power amplifier (CM-LMBA) by introducing the CM output-matching networks in the LMBA architecture. It is illustrated that the CM impedance condition can be achieved by properly adjusting the phase difference between the different PA branches in the proposed CM-LMBA during the entire load modulation process. An RF-input CM-LMBA with 1.45–2.45-GHz bandwidth using commercial GaN transistors is designed and implemented to validate the proposed architecture. The fabricated CM-LMBA attains a measured 11.2–13.4-dB gain and around 40-W saturated power. Power-added efficiency (PAE) of 46.4%–56.5% and 43.2%–50.3% is achieved at 6- and 8-dB output power back-offs throughout the designed band. When driven by a 100-MHz OFDM signal with an 8-dB peak-to-average power ratio (PAPR), the proposed CM-LMBA achieves better than −46-dBc adjacent channel leakage ratio (ACLR) and higher than 45% average PAE after digital predistortion at 1.8 and 2.1 GHz.