Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach
Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach
复制标题
通过室温方法确定高电子迁移率晶体管的 (Al)GaN 缓冲器中与碳相关的陷阱能级
DOI：
10.1063/5.0031029
复制
发表时间：
2020-12-28
影响因子：
4
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Chen, Xin;Zhong, Yaozong;Yang, Hui
通过对AlGaN/GaN高电子迁移率晶体管在背栅电压下的瞬态电流测量，结合对缓冲层垂直泄漏的测量，提出了一种确定掺碳（Al）GaN缓冲层陷阱能级的室温方法。在高背栅电压下，陷阱能级与电场强度的平方根之间存在线性关系，表明掺C缓冲层的垂直导电遵循Poole-Frenkel定律.通过所建立的室温方法，最终确定了C掺杂Al_（0.07）Ga_（0.93）N的陷阱能级为1.1eV，而C掺杂GaN的陷阱能级为0.9eV，两者都与碳杂质有关。
A room-temperature method to determine the trap energy levels in the carbon-doped (Al)GaN buffers is developed via a transient current measurement on the AlGaN/GaN high electron mobility transistors under back-gate voltages combined with a measurement of the buffer vertical leakage. Under high back-gate voltages, a linear relationship is obtained between the trap energy levels and the square roots of electric field strength, suggesting that the vertical conduction in the C-doped buffer follows the Poole-Frenkel law. The trap energy level in C-doped Al0.07Ga0.93N is finally determined to be 1.1eV through the established room-temperature approach, while that in C-doped GaN is extracted to be 0.9eV, both of which are related to the carbon impurities.