Analysis of stress in sputter-deposited films using a kinetic model for Cu, Ni, Co, Cr, Mo, W
Analysis of stress in sputter-deposited films using a kinetic model for Cu, Ni, Co, Cr, Mo, W
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使用 Cu、Ni、Co、Cr、Mo、W 动力学模型分析溅射沉积薄膜中的应力
DOI：
10.1016/j.apsusc.2022.156000
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发表时间：
2023
影响因子：
6.7
通讯作者：
Chason, Eric
中科院分区：
文献类型：
--
作者：
Su, Tong;Rao, Zhaoxia;Berman, Sarah;Depla, Diederik;Chason, Eric
许多已发表的研究已经量化了不同的工艺条件和沉积方法的薄膜应力演变。在这里，从多个晶圆曲率测量的文献中（蒸发和溅射沉积的铜，镍，钴，铬，钼和W）的数据进行了分析，在一个动力学模型，以开发一个全面的图片控制膜应力的过程。该模型包括薄膜生长动力学，晶粒生长和入射粒子能量的影响。将数据非线性最小二乘拟合到该模型使得能够确定控制每种材料的应力的动力学参数。每种材料的拟合都是以一种同时优化所有测量参数的方式完成的，包括溅射和蒸发。仅取决于材料的参数被约束为在该材料的所有数据集中具有公共值。所得到的参数的有效性进行评估，通过比较从底层的物理机制估计的值。
Many published studies have quantified film stress evolution for different processing conditions and deposition methods. Here, data from multiple wafer curvature measurements in the literature (for evaporated and sputter-deposited Cu, Ni, Co, Cr, Mo and W) are analyzed in terms of a kinetic model to develop a comprehensive picture of the processes that control film stress. The model includes the effects of film growth kinetics, grain growth and incoming particle energy. Non-linear least squares fitting of the data to this model enables the determination of kinetic parameters that control the stress for each material. The fitting for each material is done in a way that optimizes the parameters simultaneously for all the measurements, both sputtered and evaporated. Parameters that depend only on the material are constrained to have a common value among all the data sets for that material. The validity of the resulting parameters is evaluated by comparing with values estimated from the underlying physical mechanisms.